Heat treatment of semiconductor wafers where upper heater directly heats upper wafer in its entirety and lower heater directly heats lower wafer in its entirety
US5960159A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 1997 |
| Grant date | Sep 28, 1999 |
| Priority date | — |
| Expiry date | Oct 14, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing apparatus includes a substrate supporting pedestal having an upper substrate supporting pedestal and a lower substrate supporting pedestal which are vertically stacked, an upper resistance heater provided above the upper substrate supporting pedestal so as to be opposite to the upper substrate supporting pedestal, and a lower resistance heater provided under the lower substrate supporting pedestal so as to be opposite to the lower substrate supporting pedestal. Each of the upper substrate supporting pedestal and the lower substrate supporting pedestal is capable of mounting a substrate or substrates in a substantially horizontal position, and the lower substrate supporting pedestal including an opening which exposes the substrate in its entirety or openings which expose the substrates in their entireties as viewed from under the lower substrate supporting pedestal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.