Nonvolatile semiconductor memory device and method of fabrication of the same
US5960283A · kind A · utility
19Cited by
8References
40Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 8, 1997 |
| Grant date | Sep 28, 1999 |
| Priority date | — |
| Expiry date | Oct 8, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/685
Abstract
A nonvolatile semiconductor memory device and a method of fabrication thereof wherein the nonvolatile semiconductor memory device has at least one memory cell transistor of DAS type and an externally-accessible conduction layer electrically connected to the channel region of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.