Method for forming a contact to a substrate
US5960304A · kind A · utility
7Cited by
13References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 1997 |
| Grant date | Sep 28, 1999 |
| Priority date | — |
| Expiry date | May 15, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A contact (26) to a substrate (12) is formed using a first stopping layer (14), an insulating layer (16), and a second stopping layer (18). The second stopping layer (18) promotes a more accurate and controlled removal of the first stopping layer (14). A self-aligned contact (122) may be formed in a similar manner using a first stopping layer (110), an insulating layer (112), and a second stopping layer (114).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.