Nucleation of diamond films using an electrode
US5961719A · kind A · utility
16Cited by
12References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 1, 1996 |
| Grant date | Oct 5, 1999 |
| Priority date | — |
| Expiry date | May 1, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method and apparatus are disclosed for growing diamond films on a non-diamond substrate, such as a silicon wafer. The substrate surface is subjected to nucleation by means of a microwave-generated plasma while applying an electrical bias to the substrate and while an electrode is positioned adjacent to but spaced from the substrate surface. After the nucleation step, crystalline diamond is deposited on the nucleated surface from a carbon-containing plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.