Patent · US Expired

Wet chemical etchants

US5961877A · kind A · utility

37Cited by

7References

7Claims

0Family size

Inventors

McDonald Robinson · Paradise Valley, US
Richard Westhoff · Hudson, US
Charles E. Hunt · Davis, US
Li Ling · Hong Kong, CN

Key dates

Filing date	Dec 6, 1995
Grant date	Oct 5, 1999
Priority date	—
Expiry date	Dec 6, 2015

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S148/15
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, the invention relates to Si--Ge--C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.