Deposition of insulating thin film by a plurality of ion beams
US5962080A · kind A · utility
28Cited by
13References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 10, 1997 |
| Grant date | Oct 5, 1999 |
| Priority date | — |
| Expiry date | Feb 10, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/313
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing insulating thin films on a substrate employs a target that is formed of material which includes a constituent element of the insulating thin film. An ion beam preferably of inert gas is then directed toward the target to disperse the target material. Simultaneously, a second ion beam which includes another constituent element of the insulating thin film is also directed toward the substrate. The material from the target and the element of the second ion beam react in proper stoichiometry and is deposited onto the substrate as the insulating thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.