Integrated circuit device and process for its manufacture
US5962113A · kind A · utility
19Cited by
11References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1996 |
| Grant date | Oct 5, 1999 |
| Priority date | — |
| Expiry date | Oct 28, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31721
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the reaction product of an organic polysilica and polyamic ester preferably terminated with an alkoxysilyl alkyl group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.