Semiconductor laser device having a COD-preventing structure
US5962873A · kind A · utility
8Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 2, 1997 |
| Grant date | Oct 5, 1999 |
| Priority date | — |
| Expiry date | Oct 2, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3072
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor laser device comprising a semiconductor laser main body having an active layer formed between a pair of cladding layers, and a non-absorbing layer of InGaP formed on the facets of the semiconductor laser main body and having a band gap greater than the band gap of the active layer, PA1 a diffusion blocking layer of, for example, Si, SiN or Ge is formed on the surface of the non-absorbing layer, and a di-electric protective layer of, for example, AlO.sub.x, SiO.sub.x, SiN.sub.x or MgO.sub.x for regulating reflectance at the facets and protecting the non-absorbing layer is formed on the diffusion blocking layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.