Power semiconductor component with monolithically integrated precision resistor and method for the manufacture thereof
US5962912A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 29, 1995 |
| Grant date | Oct 5, 1999 |
| Priority date | — |
| Expiry date | Sep 29, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor component having a cell structure includes a metallic resistance track that is insulated from the semiconductor body of the power semiconductor component and from a control electrode by a non-conductive layer. The resistance track is provided in a lateral region between cells of the power semiconductor. The active area of the component is not made smaller by the presence of the resistance track and the resistance track is produced simultaneously with a metallic layer of the component which provides electrical contact with a main electrode of the power semiconductor so that no additional manufacturing steps are required for adding the resistive track.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.