Circuit with hot-electron protection and method
US5963076A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1997 |
| Grant date | Oct 5, 1999 |
| Priority date | — |
| Expiry date | Apr 14, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/102
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In a circuit (10), a first N-FET (N1) and a second N-FET (N2) are coupled serially between a node (15) and ground (93). The circuit (10) accommodates a first excursion (85) of a first signal (IN) at the gates of the first N-FET (N1) which is higher than the maximum allowable drain-source voltage for N-FETs. The voltage of a second signal (OUT) between the node (15) and ground (93) is distributed across the first and the second N-FETs (N1, N2). The gate voltage of the second N-FET (N2) is not constant, but controlled by a control circuit (20) receiving signals the first signal (IN) and, optionally, the second signal (OUT). With the variation of the gate voltage for the second N-FET (N2), the size of both transistors (N1, N2) can be reduced and the fall time (T.sub.F) of the second signal (OUT) can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.