Advanced nonvolatile memories adaptable to dynamic random access memories and methods of operating therein
US5963475A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1997 |
| Grant date | Oct 5, 1999 |
| Priority date | — |
| Expiry date | Dec 12, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/34
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a nonvolatile memory, compatible with a dynamic random access memory, including a memory array divided into a plurality of blocks, each of the blocks being divided into a plurality of sub-blocks, reading and writing row decoders for selecting rows of the memory array, and reading and writing gate drive circuits for selecting a plurality of drive lines which supply source voltages to the rows of the memory array, wherein the memory array employs a plurality of section decoders which are arranged between the sub-blocks, each of the section decoders being assigned to a half of the rows belong to the sub-block and connecting the drive lines to the rows.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.