Method of fabricating a field emission display device having a silicon tip
US5964629A · kind A · utility
6Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 1996 |
| Grant date | Oct 12, 1999 |
| Priority date | — |
| Expiry date | Nov 21, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/025
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
To form a silicon tip having an undercut, a photoresist pattern having a vertical profile or a positive profile is formed on a silicon substrate and an under-cuted isotropic etching process is then performed using the photoresist pattern as a mask. First and second insulation films are formed on the silicon tip and the silicon substrate except for the silicon tip. The first insulation film is then separated from the second insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.