GMR enhancement in inhomogeneous semiconductors for use in magnetoresistance sensors
US5965283A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1997 |
| Grant date | Oct 12, 1999 |
| Priority date | — |
| Expiry date | Dec 23, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12465
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The low-field magnetoresistance of a high carrier mobility semiconductor with inhomogeneities which are more conducting than the surrounding semiconductor material matrix is significantly enhanced compared to the magnetoresistance of the homogeneous material. The enhancement results from a magnetic field induced geometric effect in which current is expelled from the conducting inhomogeneity. The enhanced giant magnetoresistance is demonstrated at low field in (near) zero-band-gap material, such as Hg.sub.1-x Cd.sub.x Te(x.about.0.1). The effect is applied to the fabrication of magnetic read head sensors such as Corbino disc, bar magnetoresistance sensors and thin film sensors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.