Semiconductor memory device with amorphous diffusion barrier between capacitor and plug
US5965942A · kind A · utility
40Cited by
4References
2Claims
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Key dates
| Filing date | May 6, 1997 |
| Grant date | Oct 12, 1999 |
| Priority date | — |
| Expiry date | May 6, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor memory device, a tantalum silicon nitride film or hafnium silicon nitride film is provided, as a diffusion barrier layer, between a polysilicon plug which electrically connects a source/drain region to a lower platinum electrode of a capacitor, formed on a silicon substrate, and the lower platinum electrode. The tantalum silicon nitride film has a composition of Ta.sub.X Si.sub.1-X N.sub.Y wherein 0.75 .ltoreq.X.ltoreq.0.95 and 1.0 .ltoreq.Y.ltoreq.1.1. The hafnium silicon nitride film has a composition of Hf.sub.X Si.sub.1-X N.sub.Y wherein 0.2<X<1.0 and 0<Y<1.0.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.