Semiconductor device and method for manufacturing the same
US5966594A · kind A · utility
77Cited by
57References
92Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1996 |
| Grant date | Oct 12, 1999 |
| Priority date | — |
| Expiry date | Dec 18, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide film and the second oxide film are used as a gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.