Process for forming a semiconductor device having a conductive member that protects field isolation during etching
US5966619A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1996 |
| Grant date | Oct 12, 1999 |
| Priority date | — |
| Expiry date | Dec 23, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device (150) is formed having a first conductive member (64) overlying a field isolation region (36) that is typically less than two microns wide. Typically, the field isolation region (36) is relatively thinner compared to wider field isolation regions. The first conductive member (64) lies between the field isolation region (36) and a second conductive member (80) to shield the substrate (20). The shielding helps to increase the field threshold voltage of the field device. The invention is particularly useful in double polysilicon process flow used in forming devices operating at a potential higher than V.sub.DD. Examples of these devices include nonvolatile memories and microcontrollers having nonvolatile memory arrays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.