Process for producing semiconductor article
US5966620A · kind A · utility
272Cited by
7References
52Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 1997 |
| Grant date | Oct 12, 1999 |
| Priority date | — |
| Expiry date | Nov 14, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel process for producing a semiconductor article is disclosed which comprises the steps of preparing a first substrate constituted of a silicon substrate, a nonporous semiconductor layer formed on the silicon substrate, and an ion implantation layer formed in at least one of the silicon substrate and the nonporous semiconductor layer; bonding the first substrate to a second substrate to obtain a multiple layer structure with the nonporous semiconductor layer placed inside; separating the multiple layer structure at the ion implantation layer; and removing the ion implantation layer remaining on the separated second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.