Method for fabricating a single-crystal semiconductor
US5968260A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 1997 |
| Grant date | Oct 19, 1999 |
| Priority date | — |
| Expiry date | Mar 31, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/22
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for fabricating a single-crystal semiconductor by means of CZ method is disclosed. The method separates the single-crystal semiconductor from the melt by increasing the lift rate when the growth of a crystal body is finished. By controlling the lift rate, the single-crystal semiconductor is then gradually cooled within a range of an arbitrary crystal temperature, thereby forming a concave separated surface. The single-crystal semiconductor is cooled at a rate of lower than 35.degree. C./min when the temperature of the separated surface is within a range between the melting point and 1000.degree. C., or by keeping the temperature of the separated surface within a range between 1250.degree. C. and 1000.degree. C. for more than 30 minutes. Therefore, no dislocation is introduced in the crystal body, and productivity is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.