Method of fabricating silicon single crystals
US5968262A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 1997 |
| Grant date | Oct 19, 1999 |
| Priority date | — |
| Expiry date | Nov 21, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/206
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
When the pulling speed is V(mm/min), the temperature gradient along the crystal axis within the temperature range from the melting point of silicon to 1300.degree. C. is G1 (.degree. C./mm), the temperature gradient along the crystal axis within the temperature range from 1150.degree. to 1080.degree. C. is G2 (.degree. C./mm), and the octahedral-shaped void density is d (pieces/cm.sup.3), crystals are grown under a condition satisfying: PA1 V/G1>0.581.times.V.times.G2-(d-4.3.times.10.sup.3)/2.65.times.10.sup.6 and V/G1>0.25. In this way, the defect density is reduced to less than 1.times.106 pieces/cm.sup.3 and silicon single crystals having superior gate oxide integrity and semiconductor device yield are obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.