Method for producing silicon carbide monocrystals

US5968265A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Rene Stein · Simmerath, DE
• Roland Rupp · Achern, DE
• Johannes Volkl · Erlangen, DE

Key dates

• Filing date: Jan 27, 1998
• Grant date: Oct 19, 1999
• Expiry date: Jan 27, 2018

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/36
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for producing cubic SiC monocrystals includes dissolving SiC powder or other starting material in a solvent at high overpressures and growing the monocrystals on a seed crystal.