Method for etching a compound semiconductor, a semi-conductor laser device and method for producing the same
US5968845A · kind A · utility
6Cited by
7References
17Claims
0Family size
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Key dates
| Filing date | Feb 7, 1997 |
| Grant date | Oct 19, 1999 |
| Priority date | — |
| Expiry date | Feb 7, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An etching method for performing dry-etching on a III-V group compound semiconductor or a II-VI group compound semiconductor in a dry-etching apparatus comprising a plasma source for creating a plasma of density of about 10.sup.10 cm.sup.-3 or greater, using a mixed gas containing a gas including a halogen element and a gas including nitrogon. The etching conditions are as follows: (a flow rate of the gas containing said halogen gas)/(a flow rate of said nitrogen gas) .gtoreq.1; and an internal pressure during etching reaction is about 1 mTorr or greater.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.