Solid state image sensing device
US5969759A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 26, 1996 |
| Grant date | Oct 19, 1999 |
| Priority date | — |
| Expiry date | Dec 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/41
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
By segmenting an image sensing area into a plurality of partial areas and changing the number of stages of dummy vertical electrodes to be inserted between vertical CCD registers and horizontal CCD registers, the output gate electrode, floating diffusion layer, reset gate electrode and rest drain of each horizontal CCD register can be aligned in a line to the main body of the horizontal CCD register. It is therefore possible to avoid the reduction of the transfer efficiency at the time of transferring charges, which have reached the channel under the horizontal transfer electrode, to the channel under a dummy horizontal transfer electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.