Method of making field effect transistor with higher mobility
US5970330A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 21, 1997 |
| Grant date | Oct 19, 1999 |
| Priority date | — |
| Expiry date | Nov 21, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/973
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of increasing the performance of an FET device by aligning the channel of the FET with the [110] crystal direction of a {100} silicon wafer. The {100} silicon wafer and the image of a lithographic mask are rotated 45.degree. relative to each other so that, instead of the channel being aligned parallel with the [100] crystal direction in the conventional fabrication, the channel is aligned approximately parallel with the [110] crystal direction. The mobility of the carriers is higher in the [110] crystal direction thereby increasing the performance of the FET with only a minor modification in the lithographic process. The novel FET results with its channel aligned approximately parallel with the [110] crystal direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.