Method of manufacturing a dynamic access memory which is suitable for increasing integration and suppressing generation of leakage current using an SOI structure
US5970339A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 25, 1997 |
| Grant date | Oct 19, 1999 |
| Priority date | — |
| Expiry date | Apr 25, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A dynamic random access memory (DRAM) and a method of manufacturing the same which is suitable for increasing the integration of a semiconductor device and suppressing the generation of a leakage current using a silicon-on-insulator (SOI) structure are disclosed. The semiconductor device includes a semiconductor substrate, an insulating film formed on the semiconductor substrate, a semiconductor layer pattern formed on the insulating film, a trench formed in the semiconductor substrate through the semiconductor layer pattern and the insulating film, an electrode of a capacitor formed in the trench for electrically connected to the semiconductor layer pattern, a gate insulating film formed on the semiconductor layer pattern, a gate electrode formed on the gate insulating film, and impurity regions formed in the semiconductor layer pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.