Ferroelectric semiconductor device
US5973379A · kind A · utility
4Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 1998 |
| Grant date | Oct 26, 1999 |
| Priority date | — |
| Expiry date | May 18, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/701
Abstract
A ferroelectric semiconductor device (10) and a method of manufacturing the ferroelectric semiconductor device (10). The ferroelectric semiconductor device (10) has a layer (15) of ferroelectric material disposed on a semiconductor substrate (11) and a gate structure (27) formed on the semiconductor substrate (11). A source region (23) and a drain region (24) are formed on the semiconductor substrate such that the source region (23) and the drain region (24) are laterally spaced apart from the gate structure (27).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.