Semiconductor device having a copper wiring layer formed on a base via a barrier layer of amorphous tantalum carbide
US5973400A · kind A · utility
60Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 1997 |
| Grant date | Oct 26, 1999 |
| Priority date | — |
| Expiry date | Mar 21, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including, a wiring layer whose main component is copper being formed on a base via a barrier layer of amorphous tantalum carbide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.