Process for forming patterned dielectric oxide films
US5976625A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 1998 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Apr 7, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a dielectric oxide layer on selected areas of a substrate is disclosed. The dielectric oxide layer is formed on selected areas of the substrate using a sol process. The substrate has an area of a first material and an area of a second material which is different from the first. The first material is coated with a layer of a first compound. The layer of the first compound has a hydrophobic top surface. The second material is coated with a layer of a second compound. The layer of the second compound has a hydrophilic top surface. A layer of hydrous oxide is formed over the second compound by applying an aqueous sol solution on the surface of the substrate. The substrate is then heated to remove the first compound and the second compound from the surface of the substrate. Thereafter, the substrate with the layer of hydrous oxide thereon, is sintered to form the dielectric oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.