Exchange-coupling film and, magneto-resistance effect element and magnetic head using thereof
US5976713A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1998 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Apr 2, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1107
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An exchange-coupling film has an antiferromagnetic film consisting of an antiferromagnetic alloy such as an RMn alloy or an RMnFe alloy (R is at least one kind of element selected from Ir, Rh, Pt, Au, Ag, Co, Pd, Ni, Cr, Ge, Ru and Cu) and a ferromagnetic film stacked with the antiferromagnetic film. The antiferromagnetic film is oriented in its plane. Further, the antiferromagnetic film has a large grain diameter of such as 5 nm or more. The antiferromagnetic film can be obtained by forming a film with an alloy target of which oxygen content is 1% by weight or less. An exchange-coupling film using such an antiferromagnetic film has exchange-coupling force enough large at room temperature and high temperature region together with excellent corrosion resistance or heat resistance. The exchange-coupling film is provided with an electrode for energizing an electric current to the ferromagnetic film and is used as, for example, a spin valve type magneto-resistance effect element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.