Method of manufacturing VCSEL arrays using vapor phase epitaxy to achieve uniform device-to-device operating characteristics
US5976905A · kind A · utility
26Cited by
11References
7Claims
0Family size
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Key dates
| Filing date | Feb 16, 1996 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Feb 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An array of infrared vertical cavity surface-emitting lasers (VCSELs) and method of manufacturing the same is disclosed which reduces device-to-device non-uniformity for VCSEL arrays manufactured using well-known vapor phase epitaxial processes. The method involves growing layers comprising a standard infrared VCSEL array using a vapor phase epitaxial process on a substrate which is mosoriented from the (100) plane in the {111}A direction by preferably between eight and twelve degrees or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.