Method for manufacturing a solid state image sensing device
US5976906A · kind A · utility
1Cited by
5References
12Claims
0Family size
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Key dates
| Filing date | Oct 18, 1996 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Oct 18, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A solid state image sensing device having a semiconductor substrate, a first diffusion region of a positive or negative conductive type provided on the semiconductor substrate, a plurality of second diffusion regions each of which is an opposite conductive type relative to the first diffusion region and is provided in the first diffusion region, and a semiconductor thin layer provided on at least the second diffusion regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.