Semiconductor device
US5977564A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1997 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Oct 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type formed on the surface of the first semiconductor layer, the energy difference between the bottom of the conductive band and the vacuum level in the second semiconductor layer being smaller than that in the first semiconductor layer, a gate electrode formed above the second semiconductor layer with a gate insulating film interposed therebetween, and a pair of third semiconductor layers of the second conductivity type, being in contact with at least the first semiconductor layer and faced each other in a region of the surface of the first semiconductor layer, so that a channel region is formed under the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.