High density gate array cell architecture with sharing of well taps between cells
US5977574A · kind A · utility
117Cited by
30References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 1997 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Mar 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/907
Abstract
An arrangement and method for making a gate array architecture locates the well taps at the outer corners of each gate cell. The power buses are also located at the outside of the gate cell as well, enabling sharing of the well taps and the power buses. The location of the well taps at the outside corners of the standard cell reduces the number of transistors in a single repeatable cell from eight transistors to four transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.