Patent · US Expired

High density gate array cell architecture with sharing of well taps between cells

US5977574A · kind A · utility

117Cited by
30References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 28, 1997
Grant dateNov 2, 1999
Priority date
Expiry dateMar 28, 2017

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/907

Abstract

An arrangement and method for making a gate array architecture locates the well taps at the outer corners of each gate cell. The power buses are also located at the outside of the gate cell as well, enabling sharing of the well taps and the power buses. The location of the well taps at the outside corners of the standard cell reduces the number of transistors in a single repeatable cell from eight transistors to four transistors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.