Capacitor comprising improved TaO.sub.x -based dielectric
US5977582A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 1997 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | May 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/08
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A dielectric layer consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors, typically capacitors for Si integrated circuits. For instance, a significantly greater fraction of capacitors according to the invention than of prior art tantalum oxide capacitors can store a charge of 3 .mu.coulomb/cm.sup.2. In a currently preferred embodiment, the dielectric layer has composition Ta.sub.1-y Al.sub.y O.sub.x N.sub.z, with y.about.0.1, x.about.2.4, and z.about.0.02. The dielectric layer can be formed by sputter deposition or any other appropriate deposition technique, e.g., chemical vapor deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.