Power semiconductor module
US5977621A · kind A · utility
12Cited by
1References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 29, 1997 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Sep 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor module is specified in which a layer of foam is arranged under the housing cover in the housing. The foam not only enables mechanical support of the potting compound, so that the latter is prevented from becoming detached, but can also absorb a large pressure increase in the event of a short circuit by virtue of compression. In this way, a compensating volume is created without the housing being destroyed. The housing remains closed and no material is hurled into the surroundings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.