Thin film transistor liquid crystal display with a silicide layer formed inside a contact hole and fabricating process therefor
US5978058A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 21, 1998 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Aug 21, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1362
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There are provided a thin film transistor liquid crystal display device in which an aluminum layer and an ITO layer can be connected with simplicity and certainty and a fabricating process therefor. A thin film transistor liquid crystal display device comprising: a pair of substrates; a liquid crystal sandwiched therebetween; an aluminum layer formed on a surface in which the liquid crystal is held, of one substrate; an insulating layer covering the aluminum layer; a contact hole formed in the insulating layer so as to reach the aluminum layer; an indium tin oxide layer formed on the insulating layer including the inner surface of the contact hole; and a silicide layer lying between the indium tin oxide layer and the aluminum layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.