Semiconductor laser source
US5978396A · kind A · utility
6Cited by
2References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 1997 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Mar 13, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/024
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser source, including a stack of semiconductor laser diodes each including at least one active region. The active region includes a series of semiconductor layers located between an ohmic contact layer and a substrate which also assumes the function of an ohmic contact layer. Pressure keeps the diodes in contact with one another by way of their ohmic contact layers. Each diode has dimensions, especially in their thickness, so that the transient heating in each diode is as small as possible and so that the average heating in the stackable diodes does not exceed a predetermined value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.