Article comprising an electric field-tunable semiconductor laser
US5978397A · kind A · utility
17Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1997 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Mar 27, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/06255
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a novel tunable semiconductor laser, the lasing transition is a non-resonant tunneling transition, with the frequency of the emitted photon depending on the electrical bias across the multi-period active region of the laser. The laser can be designed to emit in the mid-IR, and can advantageously be used for, e.g., trace gas sensing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.