Semiconductor laser device
US5978402A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 1997 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Jun 20, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An integrated modulator and semiconductor laser device includes a semiconductor substrate; an optical waveguide including an active layer having a width and a cladding layer, and disposed on the semiconductor substrate, the optical waveguide including a laser part and a modulator part modulating the intensity of laser light; a semi-insulating semiconductor layer disposed on opposite sides of the optical waveguide; a low-resistance contact layer for making an ohmic contact with an electrode material, disposed on the optical waveguide, being absent between the laser part and the modulator part, and having a width equivalent to the width of the active layer. Since the contact layer with a stripe structure having a width equivalent to that of the active layer is used in making ohmic contact to the electrode material, the cladding layer of the second conductivity type below the contact layer is narrowed as well, and the isolation between the laser and the modulator is also improved with good controllability without narrowing by etching. The flow of current between the contact layer of the laser part and the contact layer of the modulator part is reduced. As a result, the isolation betwe…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.