Patent · US Expired

Method for manufacturing III-V semiconductor layers containing nitrogen

US5980631A · kind A · utility

8Cited by

2References

2Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Helmut Tews · Poughkeepsie, US
Meinrad Schienle · Ottobrunn, DE
Robert Averbeck · Munich, DE

Key dates

Filing date	Dec 17, 1997
Grant date	Nov 9, 1999
Priority date	—
Expiry date	Dec 17, 2017

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/32341
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for manufacturing III-V semiconductor layers containing nitrogen whereby during the growth of the layers, the setting of the material sources for Al, In and Ga remains fixed. During the transition to the growth of a layer with another mixed-crystal composition, the nitrogen flow is altered. A greater nitrogen flow leads to an increased installation of the more weakly bound group III elements into the growing material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.