Member for use in production device for semiconductors
US5980632A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1998 |
| Grant date | Nov 9, 1999 |
| Priority date | — |
| Expiry date | Dec 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
Abstract
A process for producing a Group III--V compound semiconductor represented by the general formula In.sub.x Ga.sub.y Al.sub.z N (provided that x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1) employs a support member for forming the semiconductor, wherein the member constitutes SiC which is obtained by converting a graphite base material into SiC. In another embodiment, the member comprises a graphite-SiC composite wherein at least a surface layer part of a graphite substrate is converted into SiC. The member of the invention has superior chemical and mechanical stability, thereby making it useful in high-productivity production devices for making compound semiconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.