Process for producing a semiconductor substrate
US5980633A · kind A · utility
275Cited by
16References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 23, 1997 |
| Grant date | Nov 9, 1999 |
| Priority date | — |
| Expiry date | Jul 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonded substrate and a process for its production is provided to solve the problem involved in the heat treatment which tends to cause troubles such as break, separation and warpage of the substrates bonded. A single-crystal semiconductor epitaxially grown on a porous semiconductor substrate is bonded to an insulator substrate, and the semiconductor substrate is removed by etching, grinding, or a combination of the both, where no heat treatment is carried out or, even if carried out, only once.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.