Formation of a metalorganic compound for growing epitaxial semiconductor layers
US5980978A · kind A · utility
18Cited by
3References
24Claims
0Family size
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Key dates
| Filing date | Jul 14, 1997 |
| Grant date | Nov 9, 1999 |
| Priority date | — |
| Expiry date | Jul 14, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/42
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Semiconductor devices are prepared by growth of epitaxial layers on a substrate from metalorganic compounds of the formula MR.sub.3, R being an alkyl group, or its amine adduct. The metalorganic compound was prepared by reacting a Grignard reagent with a metal halide in an amine solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.