Composite substrate for heat-generating semiconductor device and semiconductor apparatus using the same
US5981085A · kind A · utility
53Cited by
8References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 10, 1997 |
| Grant date | Nov 9, 1999 |
| Priority date | — |
| Expiry date | Mar 10, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12528
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composite substrate on which a heat-generating semiconductor device is to be mounted, comprising a composite layer which includes a matrix made of a metal having a high thermal conductivity and a fibrous or particulate dispersion material having low thermal expansion properties present in the matrix, and a metal layer provided onto one main surface of the composite layer, wherein either one of a heat-generating semiconductor device or a substrate with low thermal expansion properties having a heat-generating semiconductor device provided thereon, is mounted on the other main surface of the composite layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.