Semiconductor memory device with reduced inter-band tunnel current
US5982701A · kind A · utility
16Cited by
4References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 21, 1997 |
| Grant date | Nov 9, 1999 |
| Priority date | — |
| Expiry date | Mar 21, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes word drivers for selectively activating word lines with respect to memory cells. The semiconductor memory device further includes a control unit for controlling a gate voltage of transistors in the word drivers so as to reduce inter-band tunnel currents of the transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.