Semiconductor growth method
US5985025A · kind A · utility
9Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 1, 1995 |
| Grant date | Nov 16, 1999 |
| Priority date | — |
| Expiry date | Feb 1, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.