Seed crystal for producing monocrystals and method for producing SiC monocrystals or monocrystalline SiC layers

US5985026A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Johannes Volkl · Erlangen, DE
• Rene Stein · Simmerath, DE

Key dates

• Filing date: Feb 17, 1998
• Grant date: Nov 16, 1999
• Expiry date: Feb 17, 2018

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/36
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A seed crystal assembly for producing monocrystals and a method for producing SiC monocrystals or monocrystalline SiC layers include a seed crystal with a surface having a first partial region intended as a crystallization surface for a monocrystal grown out of a gas phase and a second partial region with a coating that is chemically resistant to the seed crystal and to the gas phase and does not melt at the growth temperatures. As a result, thermal degradation of the seed crystal is avoided and the quality of the monocrystals which are produced is increased.