TFT fabrication on leached glass surface
US5985700A · kind A · utility
20Cited by
12References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 26, 1996 |
| Grant date | Nov 16, 1999 |
| Priority date | — |
| Expiry date | Nov 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A method for forming top gated TFTs directly on a glass surface, wherein the glass surface is first leached adequately to provide a silica-rich boundary area at the glass surface, after which the source-drain semiconductor region is deposited directly onto the glass surface without a barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.