Semiconductor structures having advantageous high-frequency characteristics and processes for producing such semiconductor structures

US5985739A · kind A · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Andreas Plettner · Feldafing, DE
• Karl Haberger · Planegg, DE

Key dates

• Filing date: Jul 29, 1997
• Grant date: Nov 16, 1999
• Expiry date: Jul 29, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process is disclosed for producing a semiconductor structure with a highly conductive buried layer with the following steps: an insulating layer is applied to a first surface of a first semiconductor substrate, an insulating layer is applied on a surface of a layer of highly conductive material which is physically separate from the first semiconductor substrate and then the insulation layers are bonded together.