Semiconductor structure for a transistor

US5986287A · kind A · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Karl Eberl · Altötting, DE
• Karl Brunner · Nazareth, US

Key dates

• Filing date: Sep 6, 1996
• Grant date: Nov 16, 1999
• Expiry date: Sep 6, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/85

Abstract

Semiconductor structure for a transistor, having at least one doped crystalline semiconductor layer (3) consisting of a semiconductor material such as silicon or germanium which is applied onto a further crystalline layer, wherein the doped semiconductor layer (3) contains carbon alloyed with this semiconductor material to improve the conduction characteristics, and wherein a desired strain can be set in the active semiconductor layer (3) via the proportion of carbon relation to the semiconductor material.