Semiconductor type physical quantity sensor
US5986316A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 1997 |
| Grant date | Nov 16, 1999 |
| Priority date | — |
| Expiry date | Nov 26, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/73265
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A diffusion gauge is formed in a surface of a silicon substrate which has a plane orientation of (110). The diffusion gauge is disposed so that a main current thereof flows along a <110> direction perpendicular to a direction in which large stress biased in one direction generates in the surface of the silicon substrate due to distortion of a base for fixing the silicon substrate. Therefore, even when the large biased stress generates in the surface of the silicon substrate, because the <110> direction in which the main current of the diffusion gauge flows is perpendicular to the direction in which the biased stress generates, there is a little change in a resistance value of the diffusion gauge. As a result, a detection error caused by the distortion of the base can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.